[labnetwork] Forming gas: 5% or 10% hydrogen

[Dan P. Woodie]

I can’t offer anything with regards to the efficacy of a given percentage of hydrogen for the semiconductor annealing benefits, but one other item to consider is that hydrogen greater than 2.9% in nitrogen is rated as flammable, while you can go up to 5.9% in argon and still remain nonflammable. Depending on your local fire codes and regulations, that may make a difference.

Additionally, some researchers prefer argon over nitrogen to avoid any risk of a nitrogen reaction with their substrate.

Dan

Daniel Woodie
Director, Micro/Nano Fabrication Center, Princeton Materials Institute

From: labnetwork <labnetwork-bounces at mtl.mit.edu> On Behalf Of Jing Guo
Sent: Thursday, February 29, 2024 3:17 PM
To: Golan Tanami <golant at savion.huji.ac.il>
Cc: labnetwork at mtl.mit.edu
Subject: Re: [labnetwork] Forming gas: 5% or 10% hydrogen

Hi Mario,

We also use 5% H2 in N2 as our forming gas on RTP system.


Jing
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Jing Guo Ph.D.
Research Scientist
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Rice University
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713-348-8227







On Feb 29, 2024, at 6:35 AM, Golan Tanami <golant at savion.huji.ac.il<mailto:golant at savion.huji.ac.il>> wrote:

Hi Mario,

I don’t know about “the best”, but in our RTA, we use 5% H2 and 95% N2. I think it’s pretty standard.

Anyway, nobody complained yet 😊

Best regards,

Golan.

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Golan A. Tanami, PhD | Head of the Unit for Nanofabrication (UNF)

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From: labnetwork <labnetwork-bounces at mtl.mit.edu<mailto:labnetwork-bounces at mtl.mit.edu>> On Behalf Of Beaudoin, Mario
Sent: Tuesday, February 27, 2024 10:27 PM
To: labnetwork at mtl.mit.edu<mailto:labnetwork at mtl.mit.edu>
Subject: [labnetwork] Forming gas: 5% or 10% hydrogen


Dear Network,

We're setting up a new RTA and will run it with Ar, N2 and forming gas.  We're uncertain about the % level of hydrogen we want in our forming gas.  Can someone recomment the best hydrogen % to use for MOS capacitor annealing?

Regards,

Mario
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