[labnetwork] NH3 for silicon nitride deposition in ICP-CVD systems

[Christophe Clément]

Hi Joseph
We recently bought an ICP CVD from Plasma Therm (CORIAL version), and it comes with N2 and not NH3.
We have not received the tool yet.
Best
Christophe



Christophe Clément

Professionnel de recherche

Laboratoire de microfabrication (LMF)

Groupe des Couches Minces (GCM) www.gcmlab.ca<http://www.gcmlab.ca/>

Ecole Polytechnique de Montréal www.polymtl.ca<http://www.polymtl.ca/>

Département de génie physique

* 2900 Boulevard Edouard Monpetit

Pavillon JAB
Campus de l'Université de Montréal
Montréal (Québec) H3T 1J4

* christophe.clement at polymtl.ca<mailto:christophe.clement at polymtl.ca>

* 514 340 4711 #2417

Fax : 514 340 5195

________________________________
De : Joseph Losby <joseph.losby at ucalgary.ca>
Envoyé : 6 janvier 2025 13:32
À : labnetwork at mtl.mit.edu <labnetwork at mtl.mit.edu>
Objet : [labnetwork] NH3 for silicon nitride deposition in ICP-CVD systems

Hello,

For those of you that operate a ICP chemical vapor deposition system for silicon nitride, do you use NH3 as one of your process gases or is N2 sufficient?   My understanding is that the disassociation efficiency of N2 is much higher in ICP systems, so NH3 may not be necessary.

Cheers,
Joe



Joseph Losby, PhD

Manager, qLab Operations

joseph.losby at ucalgary.ca


[cid:f9192b33-9107-4363-ac9b-dca9a86ab527]<https://io.ucalgary.ca/quantum-city>

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