[labnetwork] NH3 for silicon nitride deposition in ICP-CVD systems

[Nathan Aultman]

Good morning Joe,

We use a  Plasma-therm AV system using 2% silane and ammonia.

Nathan C. Aultman
University of Central Florida
407-823-6852
naultman at creol.ucf.edu<mailto:naultman at creol.ucf.edu>



From: labnetwork <labnetwork-bounces at mtl.mit.edu> On Behalf Of Joseph Losby
Sent: Monday, January 6, 2025 1:32 PM
To: labnetwork at mtl.mit.edu
Subject: [labnetwork] NH3 for silicon nitride deposition in ICP-CVD systems

Hello,

For those of you that operate a ICP chemical vapor deposition system for silicon nitride, do you use NH3 as one of your process gases or is N2 sufficient?   My understanding is that the disassociation efficiency of N2 is much higher in ICP systems, so NH3 may not be necessary.

Cheers,
Joe



Joseph Losby, PhD

Manager, qLab Operations

joseph.losby at ucalgary.ca<mailto:joseph.losby at ucalgary.ca>



[cid:image001.jpg at 01DB60DF.6B6E5D10]<https://io.ucalgary.ca/quantum-city>


-------------- next part --------------
An HTML attachment was scrubbed...
URL: <https://mtl.mit.edu/pipermail/labnetwork/attachments/20250107/8c16a311/attachment.html>
-------------- next part --------------
A non-text attachment was scrubbed...
Name: image001.jpg
Type: image/jpeg
Size: 13901 bytes
Desc: image001.jpg
URL: <https://mtl.mit.edu/pipermail/labnetwork/attachments/20250107/8c16a311/attachment.jpg>