[labnetwork] SnO2 via ALD

[Martin, Michael]

Hello everyone,
   We are having a heck of a time depositing SnO2 in our ALD onto bare (with native oxide) silicon at a substrate temperature of 100 to 200C.  This is our first time attempting this material in our Beneq TFS200.  We are using TDMASn + H2O as precursors. We have tried heating the TDMASn anywhere between 50 to 100C, using headspace loading and via the material's vapor pressure.  We have looked at TDMASn pulse times from 200ms to 1.4 seconds with dwell times of 1 to 3 seconds. Water vapor is pulsed at our usual 100ms and a purge of 3 seconds.
  So here's a couple of questions: 1. I have read anecdotally that the material will decompose above 60C. Do you have any experience with this? 2. While the line between our heated bubbler and the reactor is quite short, it is not heated. Do your tools depositing tin oxide require a heated line to the reactor?
   Any advice would be fantastic.

Regards,

   Michael


Engineering Senior Researcher

Micro/Nano Technology Center

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