[labnetwork] HSQ developer compatible with AlN for electron beam lithography (EBL)

[Michael Rooks]

TMAH and NaOH will both attack aluminum, but you can use a thin layer of 
PMMA under the HSQ, to protect the substrate. Then after development, 
use a brief oxygen plasma to clear away the PMMA. Oxygen will not etch 
HSQ at all.

There is also some sort of buffered photoresist developer just for 
aluminum, but I've never tried that for HSQ.

------------------------------------
Michael Rooks
Yale Institute for Nanoscience and Quantum Engineering
nano.yale.edu


On 3/6/2019 7:22 AM, Edmond Chow wrote:
> Hello,
>
> We are trying to pattern HSQ with EBL on AlN film substrate,. We 
> typically use 2.2%TMAH (MF 319)as our HSQ developer.
> However TMAH will attach AlN film and cause problem for our sample.
>
> Does anyone has some HSQ developer that is compatible with AlN?
>
> Thanks.
>
> Edmond
>
>
>
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