[labnetwork] NH3 for silicon nitride deposition in ICP-CVD systems

[Demis D. John]

We use pure N2 on our ICP-PECVD tool, you can see the recipes and film
properties here:
https://wiki.nanofab.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29

-- Demis (contact info <https://wiki.nanotech.ucsb.edu/wiki/Demis_D._John>)
*Reminder*: The NanoFab has a publications policy
<https://wiki.nanotech.ucsb.edu/wiki/Frequently_Asked_Questions#Publications_acknowledging_the_Nanofab>


On Mon, Jan 6, 2025 at 5:09 PM Joseph Losby <joseph.losby at ucalgary.ca>
wrote:

> Hello,
>
> For those of you that operate a ICP chemical vapor deposition system for
> silicon nitride, do you use NH3 as one of your process gases or is N2
> sufficient?   My understanding is that the disassociation efficiency of N2
> is much higher in ICP systems, so NH3 may not be necessary.
>
> Cheers,
> Joe
>
>
> *Joseph Losby, PhD*
>
> *Manager, qLab Operations*
>
> *joseph.losby at ucalgary.ca <joseph.losby at ucalgary.ca>*
>
>
> <https://io.ucalgary.ca/quantum-city>
>
>
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